| PART |
Description |
Maker |
| HMD4M32M2EG HMD4M32M2EG-5 HMD4M32M2EG-6 |
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD1M36M3EG-5 HMD1M36M3EG-6 HMD1M36M3EG |
4Mbyte(1Mx36) 72-pin SIMM EDO with Parity MODE, 1K Ref. 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD8M32M4EG-5 HMD8M32M4EG-6 HMD8M32M4EG |
32Mbyte(8Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD8M32M16EBG HMD8M32M16EBG-5 HMD8M32M16EBG-6 |
32Mbyte(8Mx32) 72-pin EDO MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD8M36M24EG HMD8M36M24EG-5 HMD8M36M24EG-6 |
32Mbyte(8Mx36) 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD4M36M3EG |
16Mbyte(4Mx36) 72-pin SIMM EDO with Parity MODE, 4K Ref. 5V 16MbyteMx362引脚平价模式，上海药物研究所易都4K的参考5V
|
Hanbit Electronics Co., Ltd.
|
| KMM5362205C2W KMM5362205C2WG |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5361205C2WG KMM5361205C2W |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HMD16M36M12EG-6 HMD16M36M12EG-5 HMD16M36M12EG |
64MBYTE (16MX36) EDO/WITH PARITY MODE 4K REF. 72PIN-SIMM DESIGN
|
Hanbit Electronics Co.,Ltd
|
| HMD4M32M2G HMD4M32M2G-5 HMD4M32M2G-6 |
16Mbyte(4Mx32) 72-pin SIMM Fast Page Mode, 4K Refresh, 5V 16Mbyte4Mx322针的SIMM快速页面模式，4K的刷新，5V
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HSD32M32M4V-F10 HSD32M32M4V-F10L HSD32M32M4V-F12 H |
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
